Synopses & Reviews
Shuji Nakamura developed the first commercially available blue and green light emitting diodes and the first blue semiconductor laser based on GaN. GaN and its related compounds allow the fabrication of highly efficient light emitters and lasers ranging from red through yellow and green to blue in a single material. In this book the scientific basis of GaN light emitting devices and the physical concept and basic manufacturing technology of these new blue light emitting diodes and laser diodes are discussed. The breakthrough in GaN technology opens many new commercial applications for semiconductors, including displays, road and railway signalling, lighting, scanners, optical data storage, and much more. The new application field of power devices is also discussed. This second edition is not only updated but also significantly enlarged. The whole spectrum of GaN related materials, processing and application problems is contained, thus making this book the most comprehensive basic book in the field. It also tells the fascinating story of the extremely successful realization of Nakamura's research and development concept. The book will appeal to both researchers and engineers.
Review
FROM A REVIEW OF THE FIRST EDITION "The technical chapters will be lapped up by semiconductor specialists keen to know more ... the book includes fascinating material that answers the question: why did Nakamura succeed where many, much larger, research groups failed." (NEW SCIENTIST)
Review
FROM A REVIEW OF THE FIRST EDITION"The technical chapters will be lapped up by semiconductor specialists keen to know more ... the book includes fascinating material that answers the question: why did Nakamura succeed where many, much larger, research groups failed."
(NEW SCIENTIST)
Synopsis
Shuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described.
Synopsis
This book describes the most important breakthrough in solid-state laser techniques. It marks the beginning of a new era in the application of semiconductor lasers. Now the whole spectrum of visible light can be covered by one small device. The second edition is both updated and extended to cover the whole range of related topics.
Synopsis
Nakamura was the key researcher responsible for the breakthrough development of GaN semiconductor technology, which makes it possible to produce lasers with all wavelengths in one substrate material, allowing the whole spectrum of visible light to be covered by one small device. This Second Edition of his best-selling account is updated and extended to cover the whole range of related topics.
Synopsis
From the reviews of the first edition: "The technical chapters will be lapped up by semiconductor specialists keen to know more [...] the book includes fascinating material that answers the question: why did Nakamura succeed where many, much larger, research groups failed." New Scientist
Description
Includes bibliographical references (p. 347-360) and index.
Table of Contents
Background --Physics of gallium nitride and related compounds --GaN growth --p-type GaN obtained by electron beam irradiation --n-type GaN --p-type GaN --InGaN --Zn and Si co-doped InGaN/A1GaN double-heterostructure blue and blue-green LEDs --InGaN single-quantum-well LEDs --Room-temperature pulsed operation of laser diodes --Emission mmechanisms of LEDs and LDs --Room temperature CW operation of InGaN MQW LDs --Latest results: lasers with self-organized InGaN quantum dots --Conclusions.